Effect of Fe doping on the room temperature ferromagnetism in chemically synthesized (In1−xFex)2O3 (0 ⩽ x ⩽ 0.07) magnetic semiconductors

Observation of room temperature ferromagnetism in Fe doped In2O3 samples (In1−xFex)2O3 (0 ⩽ x ⩽ 0.07) prepared by co-precipitation technique is reported. Lattice parameter obtained from powder X software shows distinct shrinkage of the lattice constant indicating an actual incorporation of Fe ions into the In2O3 lattice. X-ray diffraction data measurements show that the entire sample exhibits single phase polycrystalline behavior. SEM micrographs showed the prepared powder was in the range 25-36 nm. SEM EDS mapping showed the presence of Fe and In ions in the Fe doped In2O3 sample. The highest remanence magnetization moment (6.624 × 10−4 emu/g) is reached in the sample with x = 0.03.