Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1788950 | Current Applied Physics | 2009 | 4 Pages |
Abstract
The memory charging effect of the nano-floating gate capacitor containing the In2O3 nano-particles embedded in polyimide layer was characterized. Self-assembled In2O3 nano-particles were created by chemical reaction between the polymer precursor and indium film, and then the particles size and density were about 7Â nm and 5.8Â ÃÂ 1011Â cmâ2, respectively. From capacitance-voltage hysteresis originated from electrons charging in the In2O3 nano-particles through tunneling oxide from p-type Si wafer, the flat-band voltage shift was obtained up to about 3.4Â V, when the sweeping gate voltage was from â6 to 6Â V. The endurance ability of this capacitor showed up to 2Â ÃÂ 105 cycles during the programming at 5Â V for 0.2Â ms and erasing at â5Â V for 1.8Â ms processes.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Seon Pil Kim, Tae Hee Lee, Dong Uk Lee, Eun Kyu Kim, Hyun-Mo Koo, Won-Ju Cho, Young-Ho Kim,