Dependence of current bistabilities on trap density and maximum applied voltage in organic bistable devices

The current–voltage (I–V) curves and the captured electron density with various trap densities and maximum applied voltages of organic bistable devices (OBDs) were calculated by using the Shockley-Reed trapping rate model and taking into account the thermionic emission model. The current bistabilities in the I–V curves for OBDs were attributed to captured electrons in the traps near the heterointerface between the electrode and the organic layer. The on/off ratio and the width of the memory window of the I–V curves for OBDs gradually increased with increasing trap density in the organic layer and maximum applied voltage. The maximum increase of the on/off ratio and the width of the memory window of the I–V curve for OBDs became saturated to the specific values, regardless of the continuous increase of the trap density and the maximum applied voltage.