Understanding the switching mechanism of polymer memory

Recently, we concentrated our efforts in improving the understanding of the working mechanism of the polymer memory device. Using cross-sectional transmission electron microscopy with samples prepared by focused-ion beam, we found that nanoscale non-uniformities at the electrode dominated the device characteristics. A new model involving the formation and annihilation of conductive filaments was proposed. With this information, we designed a dynamic programming scheme to manipulate the localized paths through a feedback circuit and optimization algorithm. It has been experimentally demonstrated that this new operation improves the endurance of the memory device. This paper reviews our recent work in the study of the switching mechanism of polymer memory.