| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1789062 | Current Applied Physics | 2009 | 4 Pages |
Zn-doped sprayed thin films have been grown on binary In2S3 substrates under the mean temperature (Td = 320 °C). Further studies Amlouk et al. [M. Amlouk, M.A. Ben Said, N. Kamoun, S. Belgacem, N. Brunet, D. Barjon, Japan Journal of Applied Physics 38 (1999) 26-30]; Lazzez et al. [S. Lazzez, K. Boubaker, M. Amlouk, Indirect measurement of Zn-doped In2S3 NANO films SPECIFIC heat capacity, International Journal of Nanoscience 7 (2008) 1–5.]; Lazzez et al. [S. Lazzez, K. Boubaker, T. Ben Nasrallah, M. Mnari, R. Chtourou, M. Amlouk, S. Belgacem, Structural and optoelectronic properties of InZnS sprayed layers, Acta Physica Polonica A 114 (2008) 869–880.] investigated the band gap shift, the structural and morphological changes induced by this doping. In this study, a quantitative comparative evaluation of the thermal properties of the as-grown layers is carried out. The obtained results, parallel to further information, plea for the superior thermal efficiency of the recently proposed Zn-doped ternary compounds.
