| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1789335 | Current Applied Physics | 2009 | 4 Pages |
Abstract
Deposition of CuInSe2 thin film on CuGaSe2 thin film and vice versa has been studied by a low pressure metal–organic chemical vapor deposition technique with three precursors without additional Se. The properties of the resultant films have been examined by scanning electron microscopy, X-ray diffraction, and micro-Raman scattering. Good quality and well demarcated films are obtained only in the case of CuInSe2 grown on CuGaSe2. When CuGaSe2 was grown on top of CuInSe2 diffusion of Ga into CuInSe2 was found to produce an alloy film instead.
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
In-Hwan Choi, Peter Y. Yu,