Article ID Journal Published Year Pages File Type
179356 Electrochemistry Communications 2013 4 Pages PDF
Abstract

•The effects of boron doping on the rate capability of Si–C composite are studied•Boron doping lowers the charge transfer resistance of the composite•Boron-doped Si–C composite shows much improved rate capability than the undoped one•Boron-doped Si–C composite can deliver a high capacity of 575 mAh/g at 6.4 A/g without any external carbon additive

We report a novel strategy to enhance the rate capability of Si–C composite by facile boron doping. Boron doping was confirmed by X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The boron-doped Si–C composite shows much improved rate capability, delivering a capacity of 575 mAh/g at 6.4 A/g without any external carbon additive, 80% higher than that of undoped composite. Electrochemical impedance spectroscopy (EIS) measurement shows that boron-doped Si–C composite has lower charge transfer resistance, which helps improve its rate capability.

Related Topics
Physical Sciences and Engineering Chemical Engineering Chemical Engineering (General)
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