Optimization of spin injection and spin detection in lateral nanostructures by geometrical means

•Maximization of spin injection and spin detection in lateral nanostructures.•Calculations based on one-dimensional Valet–Fert model.•Maximization by adjusting dimensions and interface resistances of the lateral devices.

Lateral spin devices are an important concept in nowadays all-metallic spintronic devices. One of the key problems is to obtain large spin injection and detection efficiency. Several concepts has been envisaged, such as to use half-metallic ferromagnetic electrodes or spin-polarized interface barriers. Within this work, we address the optimization of spin devices (namely optimization of spin current density, spin current and spin accumulation) based on adjustment of the geometry (dimensions) of the lateral device, material selection of spin conductors, jointly with optimization of the interface resistance.