Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
180662 | Electrochemistry Communications | 2009 | 5 Pages |
Abstract
The paper reports on the use of electrochemical impedance spectroscopy to determine the doping character and carrier density of freshly prepared and annealed ZnO nanostructures. The ZnO nanostructures were obtained by chemical oxidation of metallic Zn in a 5% N,N-dimethylformamide (DMF) aqueous solution at 95 °C for 24 h. The as-grown nanostructured ZnO samples display a high donor density of 3.71 ± 0.88 × 1021 cm−3. Annealing at 100 and 200 °C did not have any effect on the donor density while thermal annealing at 300 °C in air for 1 h induced a decrease in the doping concentration without affecting the surface morphology.
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Authors
Hongqin Liu, Gaëlle Piret, Brigitte Sieber, Jacky Laureyns, Pascal Roussel, Wenguo Xu, Rabah Boukherroub, Sabine Szunerits,