Electrochemically superfilling of n-type ZnO nanorod arrays with p-type CuSCN semiconductor

The primary problem for constructing three-dimensional (3D) heterojunctions lies in poor pore filling and interface contact quality. An electrochemical superfilling technique is developed to construct well-organized heterojunctions based on a bottom-up filling mechanism. Morphology observation shows that ZnO nanorod arrays are completely filled with CuSCN and intimate interface contact is formed between ZnO and CuSCN. Electrical test confirms that as-fabricated 3D heterojunction has high diode current density and high rectification ratio of 154. This superfilling technique has promising applications in other 3D heterojunctions.