Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
181356 | Electrochemistry Communications | 2009 | 4 Pages |
Abstract
We report the first electrochemical anodization of RF (radio-frequency) sputtered tungsten (W) thin films. High pressure sputtering was utilized to produce W films of low intrinsic stress with a high degree of adhesion to the transparent substrates. Structurally and uniformly porous tungsten trioxide (WO3) films were obtained under optimised anodization conditions in fluoride ion-containing electrolyte. Crystalline WO3 was obtained after annealing the films at 450 °C. SEM and XRD characterisation techniques were used to determine the surface morphology and crystal structure of the non-anodized and anodized films.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
Haidong Zheng, Abu Z. Sadek, Kay Latham, Kourosh Kalantar-Zadeh,