Article ID Journal Published Year Pages File Type
181356 Electrochemistry Communications 2009 4 Pages PDF
Abstract

We report the first electrochemical anodization of RF (radio-frequency) sputtered tungsten (W) thin films. High pressure sputtering was utilized to produce W films of low intrinsic stress with a high degree of adhesion to the transparent substrates. Structurally and uniformly porous tungsten trioxide (WO3) films were obtained under optimised anodization conditions in fluoride ion-containing electrolyte. Crystalline WO3 was obtained after annealing the films at 450 °C. SEM and XRD characterisation techniques were used to determine the surface morphology and crystal structure of the non-anodized and anodized films.

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Physical Sciences and Engineering Chemical Engineering Chemical Engineering (General)
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