Leakage current in Ti/4H-SiC Schottky barrier diode

The Ti/4H-SiC Schottky barrier diodes with an edge termination structure are fabricated. The low on-resistance of 3mΩcm2 and low-leakage current of 10-2-10-4A/cm2 over 1500 V are obtained. Current–voltage characteristics are evaluated by device simulation considering metal–semiconductor interface conditions such as bunching steps and interface pinning traps. Device simulation suggests that the variation of barrier height originated from the variation of interface pinning-trap concentration influences on the leakage current. Bunching steps have an effect on the leakage current because the electric field is enhanced at the bottom of the bunching steps.