Article ID Journal Published Year Pages File Type
182097 Electrochemistry Communications 2007 6 Pages PDF
Abstract

N-doped titania thin films were prepared by anodic oxidation of titanium sheets and subsequent heat treatment in the presence of urea pyrolysis products at 400 °C. The resulting films are modified predominantly at the surface. They exhibited a significant photocurrent response upon visible light irradiation inducing an incident photon-to-current efficiency of 1.5% at 400 nm. The flatband potential was anodically shifted by 0.2 V as compared to the unmodified film. Photocurrent transients revealed that nitrogen-centered intra-bandgap states, responsible for visible light response, induce also enhanced recombination as indicated by a cathodic “overshoot” after turning off the light. This recombination can be inhibited by the presence of iodide.

Related Topics
Physical Sciences and Engineering Chemical Engineering Chemical Engineering (General)
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