Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
182361 | Electrochemistry Communications | 2008 | 4 Pages |
Abstract
Infrared spectroscopic ellipsometry (IRSE) was applied to monitor the etching process of electrochemically formed silicon oxides (11.5 and 3.8 nm thick films) in diluted NH4F solution. The optical properties of the amorphous silicon oxide film and the time dependent thicknesses of the oxide films during the etching process were deduced from quantitative evaluations of IRSE spectra.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
Karsten Hinrichs, Katy Roodenko, Jörg Rappich,