| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1824250 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2011 | 8 Pages |
Abstract
This paper presents the results of the characterisation of a pixel sensor manufactured in 0.2μm SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero Giubilato, Serena Mattiazzo, Devis Pantano, Sarah Zalusky,