Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1830043 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2007 | 5 Pages |
Abstract
In a DEPleted Field Effect Transistor (DEPFET) sensor a MOSFET is integrated on a sidewards depleted p-on-n silicon detector, thereby combining the advantages of a fully depleted silicon sensor with in-pixel amplification. A 450 μm thick DEPFET was tested in a testbeam. The S/N was found to be larger than 110. The position resolution is better than 5 μm. At a seed cut of 7σ, the efficiency and purity are both close to 100%. In the readout chip a zero-suppression capability is implemented. The functionality was demonstrated using a radio-active source. The predicted impact parameter resolution of a 50 μm thick DEPFET vertex detector, is much better than required for the International Linear Collider (ILC).
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
J.J. Velthuis, R. Kohrs, M. Mathes, A. Raspereza, L. Reuen, L. Andricek, M. Koch, Z. Dolezal, P. Fischer, A. Frey, F. Giesen, P. Kodys, C. Kreidl, H. Krüger, P. Lodomez, G. Lutz, H.G. Moser, R.H. Richter, C. Sandow, D. Scheirich, E. von Törne, M. Trimpl,