| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1831231 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2006 | 4 Pages |
Abstract
We report on a PIN photodetector integrated with a Junction Field Effect Transistor (JFET) on a high-resistivity silicon substrate. Owing to a modified fabrication technology, the electrical and noise characteristics of the JFET transistor have been enhanced with respect to the previous versions of the device, allowing the performance to be significantly improved. In this paper, the main design and technological aspects relevant to the proposed structure are addressed and experimental results from the electrical characterization are discussed.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Gian-Franco Dalla Betta, Claudio Piemonte, Maurizio Boscardin, Paolo Gregori, Nicola Zorzi, Alberto Fazzi, Giorgio U. Pignatel,