| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1847099 | Nuclear Physics B - Proceedings Supplements | 2007 | 4 Pages |
Abstract
The growth, processing and electrical characterization of n-type homo-epitaxial CdTe:I layers on detector-grade CdTe single crystal wafers is reported as a preliminary technological step towards the fabrication of CdTe-based p-i-n diode X-/γ-ray detectors. n-type CdTe:I with resistivities around a few Ω⋅cm and electron concentrations in the mid 1016 cm−3 is demonstrated. Reactive ion etching of the n-type epilayer around the Al electrode proved necessary to improve the I-V characteristic of a Al/n-CdTe:I/i-CdTe/Pt device structure.
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