Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1882367 | Radiation Physics and Chemistry | 2015 | 4 Pages |
Abstract
Bias dependence on synergistic radiation effects caused by 110Â keV electrons and 170Â keV protons on the current gain of 3DG130 NPN bipolar junction transistors (BJTs) is studied in this paper. Experimental results indicate that the influence induced by 170Â keV protons is always enhancement effect during the sequential irradiation. However, the influence induced by 110Â keV electrons on the BJT under various bias cases is different during the sequential irradiation. The transition fluence of 110Â keV electrons is dependent on the bias case on the emitter-base junction of BJT.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Radiation
Authors
Chaoming Liu, Xingji Li, Jianqun Yang, Guoliang Ma, Liyi Xiao,