| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1882898 | Radiation Physics and Chemistry | 2016 | 6 Pages |
•Results of irradiation effect on npn BJT transistor are reported.•The radiations were a mixed neutrons-fission gamma rays and Co-60 gamma source.•Main effect was the decreasing of the transistor current gain hFE.•The influence of hFE decreasing on other transistor parameters was also analyzed.
The irradiation effects of neutrons and gamma rays on a commercial type of npn Bipolar Junction Transistors (BJTs) are reported. The decrease of the current gain factor hFE for increasing dose was analyzed. Reduction ratio for hFE between 84% and 98% at the saturated reduction level have been obtained. This is due to a small decreasing in the collector current IC and a large increasing in the base current IB, where hFE=IC/IB. Reduction ratio per dose indicates the higher influence of the neutrons than that of gamma for the same equivalent dose. Moreover, the voltage gain as a function of the frequency decremented after irradiation, and the collector saturated voltage (VCEsat) was increased. These effects illustrate the damage in the function of BJTs.
