Characterization of sputtered W–Si–N thin films by a monoenergetic positron beam

A monoenergetic positron beam was employed to characterize the uniformity and the microstructural variation of thermally treated W–Si–N thin film. As the annealing temperature is increased, positrons are found to be progressively trapped in sites rich in silicon. This behavior is explained by the formation of W clusters from which positrons are favorably trapped into the Si–N amorphous matrix. Positron results are discussed together with information obtained on similar samples by Rutheford backscattering, infrared spectroscopy and transmission electron microscopy measurements.