| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1886593 | Radiation Physics and Chemistry | 2010 | 5 Pages |
Abstract
The effect of γ-ray exposure on the metal–insulator–semiconductor (MIS) structures has been investigated using the electrical characteristics at room temperature. The MIS structures are irradiated with 60Co γ-ray source. The energy distribution of interface states was determined from the forward bias I–V characteristics by taking into account the bias dependence of the effective barrier height and ideality factor. The value of series resistance decreases with increasing dose. Experimental results confirmed that γ-ray irradiation have a significant effect on electrical characteristics of MIS structures.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Radiation
Authors
İlke Taşçıoğlu, Adem Tataroğlu, Akif Özbay, Şemsettin Altındal,