Characterization of a power bipolar transistor as high-dose dosimeter for 1.9–2.2 MeV electron beams

Results of the characterization studies on a power bipolar transistor investigated as a possible radiation dosimeter under laboratory condition using electron beams of energies from 2.2 to 8.6 MeV and gamma rays from a 60Co source and tested in industrial irradiation plants having high-activity 60Co γ-source and high-energy, high-power electron beam have previously been reported. The present paper describes recent studies performed on this type of bipolar transistor irradiated with 1.9 and 2.2 MeV electron beams in the dose range 5–50 kGy. Dose response, post-irradiation heat treatment and stability, effects of temperature during irradiation in the range from –104 to +22 °C, dependence on temperature during reading in the range 20–50 °C, and the difference in response of the transistors irradiated from the plastic side and the copper side are reported. DLTS measurements performed on the irradiated devices to identify the recombination centres introduced by radiation and their dependence on dose and energy of the electron beam are also reported.