| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1886661 | Radiation Physics and Chemistry | 2009 | 4 Pages |
Abstract
The effect of radial ion-track distribution on the transient current in semiconductors caused by a high-energy heavy ion strike was studied. Reasonable agreement was observed in experimental and calculated transient currents for ion energies ranging from several to several hundred MeV when the radius of the ion track used in the numerical simulations was shorter or equivalent to that of the penumbra radius.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Radiation
Authors
Shinobu Onoda, Toshio Hirao, Takeshi Ohshima, Hisayoshi Itoh,