Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1886779 | Radiation Physics and Chemistry | 2008 | 5 Pages |
Abstract
The high power terahertz (THz)-time domain spectroscopy (TDS) system has been designed based on S-band compact electron linac at Advanced Industrial Science and Technology (AIST). The THz pulse is expected to have the peak power of about 25Â kW with frequency range 0.1-2Â THz using the 40Â MeV electron beam which has about 1Â nC bunch charge with 300Â fs bunch length (rms). The aptitude discussion of the EO sampling method with ZnTe crystal was accomplished to apply to our THz-TDS system. The preliminary experiment of the absorption measurements of P-PPV on the Si wafer has been successfully demonstrated using the 0.1Â THz coherent synchrotron radiation (CSR) pulse and W-band rf detector. It is confirmed that the intense of the THz pulse is enough to perform the THz-TDS analysis of the sample on the Si wafer. In near future, the investigation of the un-researched materials will be started in the frequency range 0.1-2Â THz with our high power THz-TDS system.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Radiation
Authors
R. Kuroda, N. Sei, T. Oka, M. Yasumoto, H. Toyokawa, H. Ogawa, M. Koike, K. Yamada, F. Sakai,