| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1887280 | Radiation Physics and Chemistry | 2008 | 5 Pages |
The effect of 60Co (γ-ray) irradiation on the electrical properties of Au/SnO2/n-Si (MIS) structures has been investigated using the capacitance–voltage (C–V) and conductance–voltage (G/ω−V) measurements in the frequency range 1 kHz to 1 MHz at room temperature. The MIS structures were exposed to γ-rays at a dose rate of 2.12 kGy/h in water and the range of total dose was 0–500 kGy. It was found that the C–V and G/ω−V curves were strongly influenced with both frequency and the presence of the dominant radiation-induced defects, and the series resistance was increased with increasing dose. Also, the radiation-induced threshold voltage shift (ΔVT) strongly depended on radiation dose and frequency, and the density of interface states Nss by Hill–Coleman method decreases with increasing radiation dose.
