Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1888012 | Radiation Measurements | 2016 | 4 Pages |
Abstract
In the present paper the formation of defects in LiKSO4 andK2SO4crystals after excitation by 4-11Â eV photons at the temperature of liquid nitrogen was studied by the methods of thermal activation and vacuum-ultraviolet spectroscopy. It is shown experimentally that electron-hole trapping centers are formed as a result of capture of electrons and holes by anion complexes SO42â created by the transition of electrons from 1t1; 3t2; e; 2t2 orbitals in the valence band to the s-state of the cation in the conduction band. It is supposed that the formation of defects in LiKSO4 and K2SO4 crystals is caused by the dissociation of excited anion complexes, created by the transition of electrons from 1t1; 3t2; e; 2t2 orbitals in the valence band to free, antibinding orbitals 4t2â and 3a1â in the conduction band. In this case, stable electron SO3âva+eâ and hole O3â trapping centers are formed.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Radiation
Authors
T.N. Nurakhmetov, K.A. Kuterbekov, Zh.M. Salikhodzha, A.M. Zhunusbekov, A.Zh. Kainarbay, D.H. Daurenbekov, K.Zh. Bekmyrza, N.I. Temirkulova, B.M. Sadykova,