| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1891427 | Radiation Physics and Chemistry | 2013 | 5 Pages |
•Mn4Si7 nanoinclusions are created during high-temperature treatment of silicon implanted with manganese ions.•The size of Mn4Si7 nanoinclusions increases with annealing temperature while their concentration decreases.•The presence of magnetic ordering is strongly dependent on the size and concentration of Mn4Si7 nanoinclusions.
Silicon single crystals were implanted with 160 keV Mn+ ions to a dose of 1×1016 cm−2 and next annealed for 1 h up to 1070 K under ambient pressure. Glancing incidence diffraction research performed using synchrotron radiation indicated that the post-implantation treatment influenced the creation of Mn4Si7 nanoinclusions. The dimensions and concentration of these inclusions, calculated from distribution of the X-ray diffuse scattering intensity are dependent on annealing temperature. The sizes and shapes of the inclusions were also determined by high-resolution transmission electron microscopy. Magnetic properties of the Si:Mn samples were studied using superconducting quantum interference device. The origin of ferromagnetic ordering is discussed in terms of the size of nanoinclusions.
