| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1891428 | Radiation Physics and Chemistry | 2013 | 5 Pages |
Interfaces of epitaxial CuInSe2 (112) surfaces to ZnO have been prepared by Atomic Layer Deposition (ALD) and are analyzed in situ by photoelectron spectroscopy at BESSY. LEED data show a (0001) oriented ZnO film for thicker films despite the large lattice mismatch. In contrast to results obtained from ZnO-MOMBE (Metal-Organic Molecular Beam Epitaxy) preparation where an inherent ZnSe interface layer of 2 nm is formed, for ALD a ZnIn2Se4 interface layer is observed which is introducing a different band alignment as in the MOMBE case.
► Interfacial behavior of CuInSe2 to ALD deposited ZnO investigated in situ by photoemission and LEED. ► In situ determined band alignment. ► Observation of a reacted interfacial layer of ZnIn2Se4. ► Application of synchrotron radiation to observe the substrate and overlayer signals with the same kinetic energy.
