| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 445125 | AEU - International Journal of Electronics and Communications | 2012 | 5 Pages |
Abstract
A two-stage monolithic ultra-wide-band (UWB) low-noise-amplifier (LNA) designed for MB-OFDM in 0.18 μm SiGe BiCMOS process is presented. With an optimized configuration combining advantages of RES-feedback and LC-ladder matching structure, the adjustable wide input matching is got and noise figure (NF) is controlled to a relevant low status. The measured S21 is from 7.6 to 14.2 dB over the 3–11 GHz operating band, NF is from 3.2 dB to 4.8 dB. With a 2.5 V power supply, the LNA has an overall power consumption of 14.5 mW.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Computer Networks and Communications
Authors
Chen Lei, Shi Chunqi, Zhang Runxi, Ruan Ying, Lai Zongsheng,