Low-voltage low-power CMOS RF low noise amplifier

In this paper, a 1 V, 2 GHz CMOS low-noise amplifier (LNA) was developed intended for use in the front-end receiver. The circuit is simulated in standard 0.25μm CMOS MOSIS. The LNA gain is 25.675 dB, noise figure (NF) is 4 dB, reverse isolation (S12)(S12) is -134.3dB, input return loss (S11)(S11) is -14.6dB, output return loss (S22)(S22) is -13.34dB, and the power consumption is 5.13 mA from a single 1 V power supply. One of the features of the proposed design is using a three-component cascode limitation, one of it is a transistor, to reduce the supply voltage.