| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 445271 | AEU - International Journal of Electronics and Communications | 2009 | 11 Pages |
Abstract
In this paper, an accurate and efficient method for analysis of a GaAs MESFET including frequency-dependent losses of the electrodes in the time domain is presented. The time domain analysis is obtained based on the fully distributed model using finite-difference time-domain (FDTD) technique, with the assumption of the skin effect losses. The time-domain results are verified using the conventional time-domain to frequency-domain (TDFD) solution technique.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Computer Networks and Communications
Authors
Kambiz Afrooz, Abdolali Abdipour, Ahad Tavakoli, Masoud Movahhedi,