Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
448976 | AEU - International Journal of Electronics and Communications | 2013 | 4 Pages |
Abstract
This paper presents an ultra-wideband low noise amplifier design using the dual-resonant broadband matching technique. The proposed LNA achieves a 10.2 dB gain with ±0.9 dB gain flatness over a frequency range of 3.1–10.6 GHz and a −3-dB bandwidth of 2.4–11.6 GHz. The measured noise figure ranges from 3.2 to 4.7 dB over 3.1–10.6 GHz. At 6.5 GHz, the measured IIP3 and input-referred P1dB are +6 dBm and −5 dBm, respectively. The proposed LNA occupies an active chip area of 0.56 mm2 in a TSMC 0.18 μm RF-CMOS process and consumes 16 mW from a 1.8 V supply.
Related Topics
Physical Sciences and Engineering
Computer Science
Computer Networks and Communications
Authors
Chun-Chieh Chen, Yen-Chun Wang,