A simple large signal model for III–V HBT devices exceeding VBIC performances

This paper presents a large signal compact circuit simulation model for III–V heterojunction bipolar transistors (HBTs). The model is implemented as a user compiled model (UCM), in the agilent ADS circuit simulator, using C code. Though its simplicity, the model includes all physical effects taking place in power III–V-based HBT devices. It is verified by comparing its simulations to measurements in DC, small-signal and large-signal operation modes. The proposed model is further tested by comparing it to the established VBIC model and the newly introduced Agilent HBT model. It is found that despite its reduced complexity, the proposed model gives better agreement with measurements than the VBIC model in all modes of operation.