Article ID Journal Published Year Pages File Type
4614663 Journal of Mathematical Analysis and Applications 2016 19 Pages PDF
Abstract

In this paper, a multi-dimensional hydrodynamic model for the bipolar semiconductor device with insulating boundary conditions and a non-flat doping profile is investigated. The model is assumed to be spherically symmetrical. A large time behavior framework is builded for any L∞L∞ bounded radial symmetry weak solutions, that is, the weak entropy solutions are shown to converge to the corresponding stationary solutions in L2L2 norm and an exponential decay rate is also derived. No smallness and regularity conditions are assumed and the doping profile are permitted to be of large variation.

Related Topics
Physical Sciences and Engineering Mathematics Analysis
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