Effect of Delta Doping on the RF Performance of Nano-scale Dual Material MOSFET

In the present work the performance of delta doping dual material based double gate and single gate structures of different types of MOS devices have been studied. Through this the RF performances of the devices are presented by the calculation of different parameters such as Cut-off frequency, capacitance and figure of merits etc. For overall study the insulating layer is considered as a high k dielectric material Si3N4 and the gate length has been reduced to minimum of 10 nm.