Article ID Journal Published Year Pages File Type
4911003 Procedia Chemistry 2016 6 Pages PDF
Abstract
Cuprous oxide and cupric oxide thin films were deposited on silicon wafer with additional substrate bias voltage using radio-frequency magnetron sputtering of a Cu target with Ar+O2 discharge plasma. Optical emission spectroscopy was employed to monitor the intensity of atomic Cu and O emission lines at various substrate bias voltages and oxygen flow ratios. Thin film transition from cuprous oxide to cupric oxide phase was observed by X-ray diffraction analysis when the oxygen flow ratio increased. This transition was not influenced by the substrate bias voltage. Optical emission spectroscopy showed a real time monitoring results of the transition from cuprous to cupric oxide thin films. The transition was observed at a critical O2 flow ratio of 7%. The results proposed a tightly control of reactive Cu sputtering through a closed loop and real-time monitoring system for precise copper oxide thin films deposition.
Related Topics
Physical Sciences and Engineering Chemical Engineering Chemical Engineering (General)
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