| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 492637 | Procedia Technology | 2014 | 4 Pages |
Abstract
The design of a harmonic-tuned dual-band GaN HEMT power amplifier (1.28 GHz and 2.14 GHz) is presented. To increase the output power and efficiency, the transistor's load impedance at the fundamental frequency, second and third harmonics have been optimally selected. In order to design the output matching network, a new genetic-based software system for automatic synthesis of passive networks has been used. The measured performances of the dual-band amplifier are as follows: Pout = 37.28 dBm, G = 11 dB, PAE = 42.1% at f1 = 1.28 GHz; Pout = 35.7 dBm, G = 9 dB, PAE = 23.7% at f2 = 2.14 GHz.
Related Topics
Physical Sciences and Engineering
Computer Science
Computer Science (General)
