Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
4953766 | AEU - International Journal of Electronics and Communications | 2018 | 7 Pages |
Abstract
A low power 0.1-1 GHz RF receiver front-end composed of noise-cancelling trans-conductor stage and I/Q switch stage was presented in this paper. The RF receiver front-end chip was fabricated in 0.18 µm RF CMOS. Measurement results show the receiver front-end has a conversion gain of 28.1 dB at high gain mode, and the single-sideband (SSB) noise figure is 6.2 dB. In the low gain mode, the conversion gain of the receiver front-end is 15.5 dB and the IP1dB is â12 dBm. In this design, low power consumption and low cost is achieved by current-reuse and inductor-less topology. The receiver front-end consumes only 5.2 mW from a 1.8 V DC supply and the chip size of the core circuit is 0.12 mm2.
Related Topics
Physical Sciences and Engineering
Computer Science
Computer Networks and Communications
Authors
Zhiqun Li, Guoxiao Cheng, Zengqi Wang,