Oxide thickness dependent compact model of channel noise for E-mode AlGaN/GaN MOS-HEMT

In this paper, a compact channel noise model for gate recessed enhancement mode GaN based MOS-HEMT which is valid for all regions of operation is proposed. The compact noise model consists of high frequency thermal noise and low frequency flicker noise. The drain current, which is one of the most important parameters for compact noise model is developed by incorporating interface and oxide traps, mobility degradation due to vertical electric field, velocity saturation effect and self-heating effect. The flicker noise model is derived by considering mobility and carrier fluctuation due to traps present in both oxide and interface layer. The thermal noise and flicker noise models are validated by comparing the results with TCAD simulation and experimental results from literature respectively. Effect of thermal and flicker noise power spectral density (PSD) variation with different oxide thickness has also been analyzed.