Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
4954013 | AEU - International Journal of Electronics and Communications | 2017 | 5 Pages |
Abstract
A pico-watt CMOS voltage reference is developed using an SK Hynix 0.18 µm CMOS process. The proposed architecture is resistorless and consists of MOSFET circuits operated in the subthreshold region. A dual temperature compensation technique is utilized to produce a near-zero temperature coefficient reference output voltage. Experimental results demonstrate an average reference voltage of 250.7 mV, with a temperature coefficient as low as 3.2 ppm/°C for 0 to 125 °C range, while the power consumption is 545 pW under a 420 mV power supply at 27 °C. The power supply rejection ratio and output noise without any filtering capacitor at 100 Hz are â54.5 dB and 2.88 µV/Hz1/2, respectively. The active area of the fabricated chip is 0.00332 mm2.
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Authors
Sadeque Reza Khan,