Article ID Journal Published Year Pages File Type
4954020 AEU - International Journal of Electronics and Communications 2017 7 Pages PDF
Abstract
A novel fully floating memristor circuit that accounts for the Spike Timing-Dependent Plasticity (STDP) mechanism is presented in this paper. This proposed circuit does not need any multiplier or extra circuit blocks to provide non-linear characteristics and transistors, which are operated in subthreshold region. We show that memristor circuit exhibits pinched-hysteresis loop in the V-I plane when driven by any sinusoidal voltage source. We demonstrate that the conductance change of the proposed floating memristor exhibits STDP behavior after the application of a pulse-pair train. Finally we present that the time constant of the STDP learning window can be controlled using only one parameter. Proposed memristor emulator circuit that accounts for STDP characteristics is compatible with VLSI systems.
Related Topics
Physical Sciences and Engineering Computer Science Computer Networks and Communications
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