| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 498727 | Computer Methods in Applied Mechanics and Engineering | 2010 | 11 Pages |
Abstract
2d numerical solutions of a new macroscopic model describing the electron transport in semiconductors coupled with the heating of the crystal lattice are presented. The model has been obtained with the use of the maximum entropy principle. Numerical simulations of a nanoscale MOSFET are presented and the influence of self heating on the electrical characteristics is analyzed.
Related Topics
Physical Sciences and Engineering
Computer Science
Computer Science Applications
Authors
Vittorio Romano, Alexander Rusakov,