Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5005890 | Materials Science in Semiconductor Processing | 2017 | 4 Pages |
Abstract
The ultra thin body (UTB) SiGe on insulator (SGOI) substrate with body thickness of only 5 nm has been fabricated by hetero-layer transfer technique with highly selective wet etching. According to Raman spectroscopy, UTB-SiGe layer with Ge fraction of 67% and +1% partially tensile strain was transferred onto the SiO2/Si host substrate without the strain degradation. To present the feasibility of UTB-SGOI substrate, a well-behaved performance of 2-μm-gate-length normally off UTB-SGOI nMOSFET has also been demonstrated.
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Electrical and Electronic Engineering
Authors
Wen Hsin Chang, Hiroyuki Hattori, Hiroyuki Ishii, Toshifumi Irisawa, Noriyuki Uchida, Tatsuro Maeda,