Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5010295 | Solid-State Electronics | 2017 | 6 Pages |
Abstract
The design approach and performance of a 5-bit digital phase shifter implemented with 0.25 μm GaN HEMT technology for X-band phased arrays are described. The switched filter and high-pass/low-pass networks are proposed in this article. For all 32 states of the 5-bit phase shifter, the RMS phase error less than 5.5°, RMS amplitude error less than 0.8 dB, insertion loss less than 12 dB and input/output return loss less than 8.5 dB are obtained overall 8-12 GHz. The continuous wave power capability is also measured, and a typical input RF P1dB data of 32 dBm is achieved at 8 GHz.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Pengpeng Sun, Hui Liu, Zongjing Zhang, Miao Geng, Rong Zhang, Weijun Luo,