Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5010331 | Solid-State Electronics | 2017 | 6 Pages |
Abstract
Low frequency noise measurements are used as a non-destructive diagnostic tool in order to evaluate the quality of the gate oxide and the silicon film of sub-10Â nm triple-gate Silicon-on-Insulator (SOI) FinFETs. It was found that the carrier number fluctuations explain the 1/f noise in moderate inversion for n- and p-FinFETs, which allows estimating the gate oxide trap densities. The noise spectroscopy with respect to temperature (study of the generation-recombination noise) led to the identification of the traps located in the transistors silicon film.
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Authors
D. Boudier, B. Cretu, E. Simoen, R. Carin, A. Veloso, N. Collaert, A. Thean,