Modeling and simulation of solar cells quantum well based on SiGe/Si

In recent years, the development of quantum well solar cells QWSCs (Quantum Well Solar Cells) has generated a great deal of interest. These configurations have shown good promise to optimize the low conversion efficiency of conventional solar cells because of the high rate of absorption losses present in them. In this work, we are interested in modeling and simulation of two different structures of solar cells, a simple solar cell based on silicon Si and a quantum well solar cell SiGe/Si. When a solar cell is compared to 80 quantum well layers of Si0.8Ge0.2with a pin solar cell based on Si. The short circuit current Jsc increases from 23.55 to 37.48 mA/cm2 with a relative increase of 59.15% found. In addition, the limit of the absorption band of the lower energy photons extends from 1100 nm to 2000 nm.