Efficiency optimization of the structure pin-InGaN/GaN and quantum well-InGaN for solar cells

In this aim, we were interested in the optimization and simulation of pin-In1−xGaxN structure and InGaN multi quantum well structures for photovoltaic applications. This ternary alloy which is an III-V semiconductor presents important characteristics especially its gap energy, thus, the increase of the photons absorption of wavelengths. It has been shown that the increase in indium concentration increases the current density Jsc and the maximum output power. In return, the Voc decreases consequently. For In0.50Ga0.50N structure we observed that the current density and the maximum power are respectively around 19.50 mA/cm2 and 27.50 mW/cm2 with a ratio of 21.65 mA/cm2. Also it is shown that the incorporation of the quantum well in the active region results in an increase of Jsc and Pmax but Voc remains unchanged. The incorporation of 50 quantum well structure in the In0.50Ga0.50N gives 22 mA/cm2 of the current density and 32 mW/cm2 of the maximum output power. The use of the structure based on In0.50Ga0.50N (MQW) induces an efficiency of 32%. We deduced that the relative efficiency is improved by 10.9%.