Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5348946 | Applied Surface Science | 2015 | 6 Pages |
Abstract
- Full ALD Ta2O5-based ReRAM stacks was grown.
- At top Ta2O5/TiN interface TaOxNy layer is observed.
- A thin Al2O3 layer blocks TaOxNy formation at top Ta2O5/TiN interface.
- Stack with additional Al2O3 layer demonstrated fast and abrupt switching.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
K.V. Egorov, Yu.Yu. Lebedinskii, A.M. Markeev, O.M. Orlov,