Article ID Journal Published Year Pages File Type
5348946 Applied Surface Science 2015 6 Pages PDF
Abstract

- Full ALD Ta2O5-based ReRAM stacks was grown.
- At top Ta2O5/TiN interface TaOxNy layer is observed.
- A thin Al2O3 layer blocks TaOxNy formation at top Ta2O5/TiN interface.
- Stack with additional Al2O3 layer demonstrated fast and abrupt switching.
Keywords
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Full ALD Ta2O5-based stacks for resistive random access memory grown with in vacuo XPS monitoring
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