| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5348996 | Applied Surface Science | 2015 | 5 Pages |
Abstract
We report the use of hydrogen annealing to implement the substantial recovery of the a-face (112¯0) crystal structure and the 4H SiC MOSFET inversion layer mobility following material degradation by reactive ion etching (RIE). The results impact the processing of SiC trench MOSFETs where the a-face sidewall forms a significant portion of the conducting semiconductor channel.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Gang Liu, Yi Xu, Can Xu, Alberto Basile, Feng Wang, Sarit Dhar, Edward Conrad, Patricia Mooney, Torgny Gustafsson, Leonard C. Feldman,